| PART |
Description |
Maker |
| FMH25N50ES |
This new power MOSFET realized the low switching loss and low switching noise
|
Fuji Electric
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| BYC5-600 |
Rectifier diode ultrafast/ low switching loss
|
Philips Semiconductors
|
| BYC10-600CT |
RECTIFIER DIODE ULTRAFAST, LOW SWITCHING LOSS
|
NXP Semiconductors
Philips Semiconductors
|
| BYC8B-600-15 |
Rectifier diode ultrafast, low switching loss
|
NXP Semiconductors
|
| 1MBI800PN-180 |
Low loss high speed switching IGBT Modules
|
http://
FUJI[Fuji Electric]
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAR65-02 BAR65-02W Q62702-A1216 |
Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners)
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BYC10-600CT BYC10-600CT_3 BYC10-600CT127 |
Rectifier diode ultrafast, low switching loss; Package: week 1, 2005
From old datasheet system
|
NXP SEMICONDUCTORS
Philips
|
| LBAT54CWT1G |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
